Flexible four-junction inverted metamorphic AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As solar cell
Flexible four-junction inverted metamorphic AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As solar cell
复制标题
柔性四结反变质AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As太阳能电池
DOI：
10.1016/j.solmat.2020.110398
复制
发表时间：
2020-05-01
影响因子：
6.9
通讯作者：
Lu, Shulong
中科院分区：
文献类型：
--
作者：
Huang, Xinping;Long, Junhua;Lu, Shulong
制备了带隙能量为1.92/1.53/1.18/0.82eV的AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As柔性四结（4J）太阳电池。利用含铝材料和变质生长的优点，多结太阳能电池的设计变得更加容易和灵活。为了适应两个InGaAs子电池之间的晶格失配，成分阶梯渐变的AlGaInAs缓冲层被施加以释放在反变质（IMM）4 J太阳电池生长期间的失配应变。采用临时键合和选择性湿法化学腐蚀剥离外延层的方法，在50 μ m厚的聚酰亚胺（PI）薄膜上成功地制备了柔性4 J太阳电池。在不加抗反射膜（ARC）的情况下，当开路电压为3.46V，短路电流密度为9.07mA/cm（2），填充因子为82.14%时，转换效率为25.76%（AM1.5G），而加ARC后，转换效率可提高到32%以上。4J柔性太阳能电池的质量密度仅为467 g/m2，比功率高达550 W/kg。
A flexible four-junction (4 J) AlGaInP/AlGaAs/In0.17Ga0.83As/In0.47Ga0.53As solar cell with the band gap energy of 1.92/1.53/1.18/0.82eV was fabricated. Taking advantages of aluminum (Al)-contained material as well as metamorphic growth, the design of multiple junction solar cells became much easier and more flexible. In order to accommodate lattice mismatch between two InGaAs sub cells, compositionally step-graded AlGaInAs buffer layers were applied to release the mismatch strain during the inverted metamorphic (IMM) 4 J solar cells growth. A flexible 4 J solar cell on a 50 mu m thick polyimide (PI) film was successfully fabricated by using temporary bonding and epitaxial layer lift-off via selective wet chemical etching. A conversion efficiency of 25.76% (AM1.5G) with an open circuit voltage of 3.46V, a short-circuit current density of 9.07 mA/cm(2) and a fill factor of 82.14% was obtained without anti-reflection coating (ARC), and it would be higher than 32% by ARC integration. The mass density of the 4 J flexible solar cell was only 467 g/m(2), and the specific power was up to 550 W/kg.