Electrical characteristics of AlGaAs/GaAs heterostructures with a pair of 2-D electron and hole channels
Electrical characteristics of AlGaAs/GaAs heterostructures with a pair of 2-D electron and hole channels
复制标题
具有一对二维电子和空穴通道的 AlGaAs/GaAs 异质结构的电特性
DOI：
10.1109/ted.2015.2474735
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发表时间：
2015
影响因子：
3.1
通讯作者：
T. Noda and H. Sakaki
中科院分区：
文献类型：
--
作者：
T. Kushida;M. Ohmori;S. Osanai;D. Kawamoto;T. Noda and H. Sakaki
为了使功率器件具有更低的损耗和更高的功率容量，基于GaN、GaAs和相关材料的超结（SJs）是有吸引力的。这是因为它们具有比Si更高的击穿场，并且允许使用异质结构，其中可以形成高度导电的二维电子和空穴层。作为迈向这种SJ器件的一步，我们已经制作了AlGaAs/GaAs四端器件，其中嵌入了一对电子/空穴通道。电子和空穴的传输特性进行了研究，通过操作的FET中的一个通道的电导控制使用其他作为栅极的设备。两个通道之间的电流-电压和电容-电压特性进行评估，通过操作的设备作为p-n二极管。测量的特性进行检查，通过比较它们与器件模拟的重点是在每个通道的载流子耗尽过程。
To make power devices with lower losses and higher power capabilities, superjunctions (SJs), based on GaN, GaAs, and related materials, are attractive. It is because they have higher breakdown fields than Si and allow the use of heterostructures, where highly conductive layers of 2-D electrons and holes can be formed. As a step toward such SJ devices, we have fabricated AlGaAs/GaAs four-terminal devices in which a pair of electron/hole channels is embedded. Transport properties of electrons and holes are studied by operating the devices as FETs in which the conductance of one channel is controlled by using the other as a gate. Current-voltage and capacitance-voltage characteristics between the two channels are evaluated by operating the devices as p-n diodes. Measured characteristics are examined by comparing them with device simulations with a focus on the carrier depletion process in each channel.