Large-area MoS2 deposition via MOVPE
Large-area MoS2 deposition via MOVPE
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DOI：
10.1016/j.jcrysgro.2016.11.020
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发表时间：
2017-04-15
影响因子：
1.8
通讯作者：
Vescan, A.
中科院分区：
文献类型：
--
作者：
Marx, M.;Nordmann, S.;Vescan, A.
研究了利用金属-有机气相外延（MOVPE）直接沉积二维过渡金属二硫化物MoS2的方法。生长在商用爱思强卧式热壁反应器中进行。采用六羰基钼（MCO）和二叔丁基硫化钼（DTBS）分别作为钼和硫的金属有机前驱体。通过拉曼光谱证明了MoS2在蓝宝石和Si以及AIN和GaN模板等各种衬底上的成功沉积。研究了生长时间对层状形貌演变的影响。载气的变化表明，纯氮生长气氛和750℃的生长温度可以改善层的质量。此外，还研究了生长样品的沉积后退火工艺。结果表明，在650 ~ 750℃的纯氮气氛中退火能显著提高拉曼强度。
The direct deposition of the 2D transition metal dichalcogenide MoS2 via metal-organic vapour phase epitaxy (MOVPE) is investigated. Growth is performed in a commercial AIXTRON horizontal hot-wall reactor. Molybdenum hexacarbonyl (MCO) and Di-tert-butyl sulfide (DTBS) are used as metal-organic precursors for molybdenum and sulfur, respectively. The successful deposition of MoS2 is demonstrated via Raman spectroscopy on various substrates such as sapphire and Si as well as AIN and GaN templates. The influence of growth time on the evolution of layer morphology is investigated. Variation of carrier gas reveals that a pure nitrogen growth atmosphere and a growth temperature of 750 degrees C improve layer quality. Additionally, a post-deposition annealing process of the grown samples is examined. It is shown that annealing in a pure nitrogen atmosphere at temperatures between 650 degrees C and 750 degrees C strongly increases the Raman intensities.