Near-infrared photodetectors based on a HgInTe-semiconductor compound
Near-infrared photodetectors based on a HgInTe-semiconductor compound
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DOI：
10.1117/12.344582
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发表时间：
1999-04
期刊：
影响因子：
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通讯作者：
A. I. Malik;M. Vieira;M. Fernandes;F. Maçarico;Z. Grushka
中科院分区：
文献类型：
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作者：
A. I. Malik;M. Vieira;M. Fernandes;F. Maçarico;Z. Grushka
提出了一种基于Hg3In2Te6半导体化合物制备的新型近红外探测器。该三元化合物为直接间隙n型半导体，带隙为0.74 eV，室温载流子浓度约为1013 cm-3。通过化学氧化Hg3In2Te6表面形成势垒，制备了活性面积为3 ~ 50mm2的透明导电金属氧化物电极-界面化学生长氧化物-半导体衬底的表面势垒结构。用XPS分析确定了氧化层的组成（40% In2O3, 50% TeO2, 10% HgO）。采用磁控射频溅射技术在该层上沉积了掺锡氧化铟（ITO）薄膜（作为透明导电电极）。该器件对波长在0.4到1.7微米之间的光非常敏感。一种自校准的光电探测器，在1.3微米和1.5微米的波长上允许100%的外部量子效率（误差不超过2%），已经开发出来。在薄Hg3In2Te6衬底上制备的光电探测器具有生产价格低、光敏面积大的优点。有效面积为3mm2的光电探测器在1.3微米脉冲照射下的上升和下降时间为2 ~ 4ns。对基本材料和器件制造技术进行了详细的讨论。
We present a new near-infrared photodetectors fabricated based on Hg3In2Te6 semiconductor compound. This ternary compound is a direct-gap n-type semiconductor with the band gap of 0.74 eV and carrier concentration about 1013 cm-3 at room temperature. Surface-barrier structures a transparent conducting metal oxide electrode-interfacial chemical grown oxide-semiconductor substrate with an active area from 3 to 50 mm2 have been fabricated by chemical oxidation of Hg3In2Te6 surface for the potential barrier's formation. The composition of oxide layer (40% In2O3, 50% TeO2, and 10% HgO) was determined using XPS analysis. Tin-doped indium oxide (ITO) film (as transparent conducting electrode) was deposited over this layer by magnetron RF sputtering technique. The devices are very sensitive to light with the wavelength from 0.4 to 1.7 micrometer. A self-calibrated photodetectors, which permit 100% external quantum efficiency (within error not exceeding 2%) at wavelengths of 1.3 and 1.5 micrometer, have been developed. The photodetectors fabricated on thin Hg3In2Te6 substrates have a low producing price and can be fabricated with a large photosensitive area. Photodetectors with an active area of 3 mm2 exhibit the rise and fall times from 2 to 4 ns under 1.3 micrometer pulse irradiation. Both basic material aspects and devices fabrication technique is detailed discussed.