Coil Design for Integration with GaN Hall-Effect Sensors
Coil Design for Integration with GaN Hall-Effect Sensors
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DOI：
10.1109/wipdaeurope55971.2022.9936109
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发表时间：
2022-09
期刊：
影响因子：
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通讯作者：
V. Marsic;S. Faramehr;P. Igić
中科院分区：
文献类型：
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作者：
V. Marsic;S. Faramehr;P. Igić
在本文中，我们报告和比较线圈设计的氮化镓（GaN）智能电源集成，其中电源开关是单片集成霍尔效应传感器。详细的几何形状优化的线圈周围的GaN霍尔效应磁传感器的电流监测应用的研究。电磁三维模型检查单匝或多匝线圈的尺寸和配置，以便与senseHEMT集成，以电流方式监控主电源开关的电流。在传感器表面上使用同心接收区，理论结果展示了线圈设计如何影响磁场空间分布。我们使用MATLAB环境作为广泛采用的计算平台，对GaN智能功率集成线圈进行电磁仿真。
In this paper, we report on and compare coil designs for Gallium Nitride (GaN) smart power integration, where the power switch is monolithically integrated with Hall-effect sensor. A detailed geometry optimization study for a coil routed around a GaN Hall-effect magnetic sensor is presented for current monitoring applications. An electromagnetic 3-dimensional model examines the dimensions and configurations of the coil in a single or multiple turns for integration with a senseHEMT to galvanically monitor the current of the main power switch. Using concentric receiving zones on the sensor surface, the theoretical results demonstrate how coil designs affect the magnetic field spatial distribution. We use the MATLAB environment as an extensively adopted computing platform to electromagnetically simulate priory design the coils for GaN smart power integration.