Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
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PL 成像识别缺陷上形成的 4H-SiC PiN 二极管的表征
DOI：
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发表时间：
2016
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通讯作者：
P. Mawby
中科院分区：
文献类型：
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作者：
Y. Bonyadi;P. Gammon;R. Bonyadi;V. Shah;C. Fisher;D. Martin;P. Mawby
本文采用原子力显微镜和光致发光（PL）成像技术对不同厂家生产的30、35和110µm的4H-SiC外延层表面质量进行了评价。然后有意地在三角形缺陷和形成的多型颗粒上制造PiN二极管，以便了解它们对所得到的电气特性的影响，包括导通状态行为、导通特性和反向漏电流行为。结果表明，该缺陷在p型阳极短路时形成了高电阻。这导致更高的泄漏电流，远高于108倍的器件形成无缺陷。与非缺陷型二极管不同，缺陷型二极管易发生软击穿。
In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 108 times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.