Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
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DOI：
10.3762/bjnano.10.229
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发表时间：
2019-12-05
影响因子：
3.1
通讯作者：
Bluet, Jean Marie
中科院分区：
文献类型：
--
作者：
Castellettol, Stefania;Al Atem, Abdul Salam;Bluet, Jean Marie
我们报告了 n 型 4H-SiC 微柱阵列中硅单空位 (V-Si)、硅和碳双空位 (VCVSi) 以及氮空位 (NCVSi) 整体在 850 至 1400 nm 之间的光学发射的增强。微柱的长度约为。 4.5μm，直径约。 740 nm，并注入 H+ 离子以产生深度约为 2 μm 的色心集合。样品在不同温度（750 和 900 摄氏度）下进行部分退火，以选择性地产生不同的色心。对于所有这些色心，我们发现使用微光致发光系统，光稳定性荧光发射至少增强了 6 倍。使用定制的共焦显微镜设置，我们对 V-Si 的发射进行了表征，测量增强高达 20 倍，以及 NCVSi 的发射，增强高达 7 倍。实验结果得到有限元方法模拟的支持。我们的研究为利用 V-Si 和 NCVSi 集成超亮整体进行器件设计和制造提供了途径，用于红外体内成像和传感。
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V-Si), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 mu m and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 mu m. The samples were in part annealed at different temperatures (750 and 900 degrees C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of V-Si, measuring an enhancement by up to a factor of 20, and of NCVSi, with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of V-Si, and NCVSi, for in vivo imaging and sensing in the infrared.