Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films
Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films
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镍注入非晶硅薄膜中的硅化物沉淀和硅结晶
DOI：
10.1557/jmr.1990.2133
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发表时间：
1990
影响因子：
2.7
通讯作者：
K. Tu
中科院分区：
文献类型：
--
作者：
R. Cammarata;C. Thompson;C. Hayzelden;K. Tu
用扫描透射电镜研究了镍离子注入非晶硅薄膜中NiSi_2沉淀的成核和生长动力学。结果表明，当薄膜在325 ~ 400 °C退火时，在t = 0时刻，成核速率可以用δ函数近似描述。在这些温度下的沉淀物的生长动力学由r = t ^n描述，其中r是平均半径，n约为1/3。这种行为与二维扩散场中三维颗粒生长的模型是一致的。还发现，注入的非晶薄膜显示出增强的单晶硅形成速率，显然是由迁移的硅化物沉淀物催化的。
The nucleation and growth kinetics of NiSi_2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ t ^n, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates.