Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
复制标题
DOI：
10.1186/s11671-018-2827-4
复制
发表时间：
2019-01
影响因子：
--
通讯作者：
Siyu Cao;Yue Zhao;S. Feng;Y. Zuo;Lichun Zhang;B. Cheng;Chuanbo Li
中科院分区：
文献类型：
--
作者：
Siyu Cao;Yue Zhao;S. Feng;Y. Zuo;Lichun Zhang;B. Cheng;Chuanbo Li
对InGaAs/InAlAs雪崩光电二极管（APD）和单光子雪崩光电二极管（SPAD）进行了理论分析和二维模拟。研究了InGaAs/InAlAs APD和SPAD的电场分布和隧穿效应。当InGaAs/InAlAs SPAD工作在盖革模式下时，吸收层中的电场线性增加，而倍增层中的电场则偏离其线性关系。考虑到倍增层中的隧穿阈值电场，倍增层的厚度应大于300 nm。此外，SPAD可以在大的偏压下工作，以避免在电荷层中具有高掺杂浓度的吸收层中的隧穿。
Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.