Electrical Characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si Structure for Metal–Ferroelectric-Insulator–Semiconductor Field-Effect-Transistor Application
Electrical Characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si Structure for Metal–Ferroelectric-Insulator–Semiconductor Field-Effect-Transistor Application
复制标题
用于金属-铁电-绝缘体-半导体场效应晶体管应用的 Pt/SrBi2.4Ta2O9/ZrO2/Si 结构的电气特性
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
T. Oh
中科院分区：
文献类型：
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作者：
Joo;Jae;T. Oh
提出了一种适用于金属-铁电-绝缘体-半导体场效应晶体管的铂/SBT/ZrO2/Si结构。采用液源雾化化学沉积法(LSMCD)在Si衬底上制备了SrBi2.4Ta2O9(SBT)薄膜，并用反应溅射法制备了ZrO2缓冲层。用LSMCD法制备的SBT薄膜在±5V电压下的2PR为16.6µC/cm2，EC为25kV/cm，抑制了SBT与Si之间的互扩散，薄膜厚度大于20 nm。随着栅极电压的增加和氧化锆厚度的减小，含20-50 nm氧化锆的铂/SBT(400 Nm)/ZrO2/Si的存储窗口变大。在±5V和±7V下，Pt/SBT(400 Nm)/ZrO2(20 Nm)/Si的存储窗口分别为0.83V和1.26V。
The Pt/SBT/ZrO2/Si structure was proposed for metal–ferroelectric-insulator–semiconductor field-effect-transistor applications. A SrBi2.4Ta2O9 (SBT) thin film was prepared using liquid source misted chemical deposition (LSMCD) on a Si substrate with ZrO2 buffer layer deposited by reactive sputtering. The LSMCD-derived SBT film exhibited 2Pr of 16.6 µC/cm2 and Ec of 25 kV/cm at ±5 V. Interdiffusion between SBT and Si was suppressed with a ZrO2 layer thicker than 20 nm. The memory window of the Pt/SBT (400 nm)/ZrO2/Si with 20–50 nm ZrO2 became larger with increasing the gate voltage and decreasing ZrO2 thickness. The Pt/SBT (400 nm)/ZrO2 (20 nm)/Si exhibited memory windows of 0.83 V at ±5 V and 1.26 V at ±7 V.