Controlled electron doping into metallic atomic wires: Si(111)4×1-In
Controlled electron doping into metallic atomic wires: Si(111)4×1-In
复制标题
金属原子线中的受控电子掺杂：Si(111)4×1-In
DOI：
10.1103/physrevb.81.075401
复制
发表时间：
2010
影响因子：
3.7
通讯作者：
H. Yeom
中科院分区：
文献类型：
--
作者：
H. Morikawa;C. Hwang;H. Yeom
我们展示了可控的电子掺杂到金属原子线中，铟线在Si（111）表面自组装，具有一维（1D）带结构和温度驱动的金属-绝缘体转变。碱金属吸附系统地增加了一维金属带的电子填充，从而调整了宏观性质，即抑制了金属-绝缘体的转变。另一方面，掺杂原子在不打开带隙的情况下引起局部晶格畸变，导致表面微观相分离。因此，揭示了不同长度尺度上掺杂剂的不同双功能、电子和结构作用。
We demonstrate the controllable electron doping into metallic atomic wires, indium wires self-assembled on the Si(111) surface, which feature one-dimensional (1D) band structure and temperature-driven metal-insulator transition. The electron filling of 1D metallic bands is systematically increased by alkali-metal adsorption, which, in turn, tunes the macroscopic property, that is, suppresses the metal-insulator transition. On the other hand, the dopant atoms induce a local lattice distortion without a band-gap opening, leading to a microscopic phase separation on the surface. The distinct bifunctional, electronic and structural, roles of dopants in different length scales are thus disclosed.