Reduction of internal stress in sputter‐deposited films by energetic ion bombardment
Reduction of internal stress in sputter‐deposited films by energetic ion bombardment
复制标题
高能离子轰击降低溅射沉积薄膜的内应力
DOI：
10.1063/1.115992
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发表时间：
1996
影响因子：
4
通讯作者：
S. Maruno
中科院分区：
文献类型：
--
作者：
R. Nowak;Y. Horino;Y. Ando;S. Maruno
通过高能硅离子轰击薄膜，已经完成了相当大的弛豫过程中出现的HfN薄膜在其沉积过程中，通过溅射法。根据表面曲率的测量值估算了内应力。我们的研究结果表明，薄膜中的内部压应力松弛，这是通过沉积后高能离子轰击产生的热尖峰内的间隙缺陷的传输而发生的。HfN薄膜在处理前后的力学性能已经通过深度传感压痕技术进行了研究，同时使用X射线衍射，卢瑟福背散射和俄歇电子能谱进行了结构分析。离子轰击不影响薄膜的电阻率，同时改善其塑性性能。
Considerable relaxation of the high internal stresses which arise in HfN thin films during their deposition by a sputtering method has been accomplished through bombarding the films with energetic silicon ions. The internal stresses have been estimated from the measurements of the surface curvature. Our results indicate a relaxation of the internal compressive stresses in the films, which occurs via a transport of the interstitial defects within the thermal spikes created by a post‐deposition energetic ion bombardment. The mechanical properties of HfN films before and after the treatment have been studied by depth‐sensing indentation technique while the structural analysis has been made using x‐ray diffraction, Rutherford backscattering, and Auger electron spectroscopy. Ion bombardment did not affect resistivity of the thin films while improving their plastic properties.