Diodes of Nanocrystalline SiC on n-/n+-type Epitaxial Crystalline 6H-SiC
Diodes of Nanocrystalline SiC on n-/n+-type Epitaxial Crystalline 6H-SiC
复制标题
n-/n-型外延晶体 6H-SiC 上的纳米晶 SiC 二极管
DOI：
10.1016/j.apsusc.2017.11.099
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发表时间：
2018
影响因子：
6.7
通讯作者：
Chang Li
中科院分区：
文献类型：
--
作者：
Junding Zheng;Wensheng Wei;Chunxi Zhang;Mingchang He;Chang Li
研究了以（n-/n+）6 H-SiC外延片为衬底的纳米晶SiC二极管，其中（n+）6 H-SiC层作为阴极。对于第一单元，通过等离子体增强化学气相沉积方法在晶片上直接沉积重掺杂硼的SiC膜作为阳极。对于第二种，本征SiC膜被制备成插入晶片和SiC阳极之间。第三种方法包括SiC阳极、本征SiC层和在晶片旁边的轻磷掺杂SiC膜。用X射线衍射、透射电镜和拉曼光谱等方法对薄膜的纳米化进行了表征。电流-电压曲线显示了半导体二极管的整流特性，并研究了其导电机理。通过检测反向恢复电流波形，分析其恢复性能.在所制备的二极管的基区中的纳米SiC膜被证明是用于少数载流子寿命控制的局部区域，以改善反向恢复特性。
The diodes of nanocrystalline SiC on epitaxial crystalline (n−/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.