Constrained sintering of silver circuit paste
Constrained sintering of silver circuit paste
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DOI：
10.1111/j.1551-2916.2004.00187.x
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发表时间：
2004-02-01
影响因子：
3.9
通讯作者：
Jean, JH
中科院分区：
文献类型：
--
作者：
Lin, YC;Jean, JH
研究了刚性硅基板上银膜约束烧结过程中的致密化动力学和应力发展。与自由烧结相比，约束银膜的烧结表现出低得多的致密化和较慢的致密化动力学。致密化控制机制从自由烧结的快速晶界扩散动力学转变为受限烧结的慢速晶格扩散动力学。使用非接触式激光扫描光学系统测量银膜约束烧结过程中产生的面内拉伸应力，最初迅速增加至最大水平1.0-1.5 MPa，然后逐渐减小，然后稳定在0.8-1.0 MPa。由于致密化速率更快，观察到的最大应力随着烧结温度的升高而增加。人们认为，约束银膜致密化动力学的延迟是由致密化机制的变化和面内拉伸应力的存在引起的。
Densification kinetics and stress development during constrained sintering of a silver film on a rigid silicon substrate have been studied. Compared with free sintering, the sintering of constrained silver film exhibits a much lower densification and slower densification kinetics. The densification-controlled mechanism changes from fast grain-boundary diffusion kinetics for free sintering to slow lattice diffusion kinetics for constrained sintering. The in-plane tensile stress developed during constrained sintering of silver film, measured using a noncontact laser-scanning optical system, increases rapidly to a maximum level of 1.0-1.5 MPa initially, gradually decreases, and then becomes constant at 0.8-1.0 MPa. The maximum stress observed increases with increasing sintering temperature as a result of the faster densification rate. It is believed that the retardation of densification kinetics of constrained silver film is caused by a change in densification mechanism and the existence of in-plane tensile stress.