Wide-Spectrum Polarization-Sensitive Photodetector Based on Spontaneous GaTe/Ga2(TexO1-x)5 Heterostructure
Wide-Spectrum Polarization-Sensitive Photodetector Based on Spontaneous GaTe/Ga2(TexO1-x)5 Heterostructure
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DOI：
10.1109/ted.2023.3242932
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发表时间：
2023-04
影响因子：
3.1
通讯作者：
Jing-Rong Zhou;Tao Xiong;Zheng-Zhao Guo;Kaiyao Xin;Xiaoyu Wang;Honggang Gu;Yueyang Liu;Liyuan Liu;Juehan Yang;Zhongming Wei
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文献类型：
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作者：
Jing-Rong Zhou;Tao Xiong;Zheng-Zhao Guo;Kaiyao Xin;Xiaoyu Wang;Honggang Gu;Yueyang Liu;Liyuan Liu;Juehan Yang;Zhongming Wei
具有面内各向异性的低维半导体材料由于其特殊的晶格结构所产生的新颖的物理化学性质，引起了人们越来越多的关注。在三族金属硫化物中，GAS、GASE和In2Se在微电子学、光电子学和铁电子学方面都有令人印象深刻的表现。因此，对III族硫族化合物及其异质结构的研究对于具有潜在功能的多种应用具有重要意义。碲化镓(GATE)是一种典型的面内各向异性的III族硫系二维半导体材料，在大气中可被氧化，形成由GATE及其氧化物组成的自发范德华异质结构。在被氧化物覆盖后，这一新系统显示出比栅极更小的带隙，并表现出比对应系统更好的性能。基于这种特殊异质结的光电探测器对紫外光和红外光具有较宽的响应范围，响应率为1.67A/W，外量子效率为391.25%，快速响应时间为0.4ms。由于具有面内各向异性的晶体结构，该光电探测器在532 nm和638 nm的光照下观察到了偏振敏感行为。结果表明，门结构和异质结可以被视为工作在宽带光谱中的偏振敏感光探测器的潜在候选者。
Low-dimensional semiconductor materials with in-plane anisotropy have attracted increasing attention due to the novel physicochemical properties induced by the special lattice structure. Among III-group metal chalcogenides, GaS, GaSe, and In2Se3 have been reported impressive performances in microelectronics, optoelectronics, and ferroelectronics. Therefore, the investigation on the III-group chalcogenides and their heterostructures is important for diverse applications with promising functionalities. Gallium telluride (GaTe), as a typical III-group chalcogenide 2-D semiconductor with in-plane anisotropy, can be oxidized in atmosphere, thus forming a spontaneous van der Waals heterostructure consisting of GaTe and its oxides. After being covered with oxides, this new system shows a reduced bandgap than GaTe and exhibits improved properties than counterparts. Moreover, the photodetector based on this special heterostructure shows a broadband response from ultraviolet to infrared radiation with a responsivity of 1.67 A/W, an external quantum efficiency (EQE) of 391.25%, and a fast response time of 0.4 ms. Benefiting from the in-plane anisotropic crystal structure, the photodetector was observed polarization-sensitive behaviors under the illumination of 532- and 638-nm light. It is suggested that GaTe along with the heterostructure can be seen as promising candidates for polarization-sensitive photodetection operated in a broadband spectrum.