Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation
Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation
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DOI：
10.1149/1.3560510
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发表时间：
2011-01-01
影响因子：
3.9
通讯作者：
Suga, Tadatomo
中科院分区：
文献类型：
--
作者：
Wang, Chenxi;Suga, Tadatomo
在不进行湿化学处理和退火的情况下，成功地实现了室温Si/Si晶片直接键合。通过在氧等离子体处理中加入少量的四氟化碳（CF 4），在室温下得到了非常强的Si/Si键合强度，接近于硅的体断裂强度。键合Si/Si晶片对的表面能受等离子体处理参数的影响。此外，晶片表面和键合界面进行了分析，探讨键合机制。在O-2等离子体中加入少量的CF 4不会在短时间内（类似于60 s）蚀刻Si表面，但它使在Si表面上生长的氟化氧化物，其应该比通过O-2等离子体处理的表面亲水性差。因此，在键合界面处较少的水分子可能易于通过聚合反应产生许多共价键，并导致在室温下的强键合。(C)2011年电化学学会。[DOI：10.1149/1.3560510]保留所有权利。
Room-temperature Si/Si wafer direct bonding has been achieved successfully without wet chemistry treatment as well as no requiring annealing. Very strong bonding strength of Si/Si pairs, close to the bulk-fracture strength of silicon, is demonstrated at room temperature thanks to adding small amount of carbon tetrafluoride (CF4) into oxygen plasma treatment. The surface energies of bonded Si/Si wafer pairs were influenced by plasma treatment parameters. Moreover, the wafer surfaces and the bonding interfaces are analyzed to explore the bonding mechanism. Adding small amount of CF4 into O-2 plasma does not etch the Si surface in a short time (similar to 60 s), but it renders fluorinated oxide grown on the Si surface, which should be less hydrophilic than the surface treated by O-2 plasma. Therefore, fewer water molecules at bonding interface may be prone to produce many covalent bonds via polymerization reaction and result in strong bonding at room temperature. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3560510] All rights reserved.