A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration
A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration
复制标题
用于溶液处理聚合物薄膜晶体管电路集成的等离子体增强化学气相门电介质的比较研究
DOI：
10.1063/1.3029704
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发表时间：
2008
影响因子：
3.2
通讯作者：
B. Ong
中科院分区：
文献类型：
--
作者：
Flora M. Li;A. Nathan;Yiliang Wu;B. Ong
本文考虑等离子体增强化学气相沉积（PECVD）氮化硅（SiNx）和氧化硅（SiOx）作为有机薄膜晶体管（OTFTs）的栅极介质，溶液处理聚[5,5 ' -双（3-十二烷基-2-噻吩）-2,2 ' -二噻吩]（PQT-12）作为有源半导体层。我们研究了在300°C和150°C下沉积不同成分的SiNx薄膜的晶体管的塑料相容性。随着SiNx中硅含量的增加，晶体管的场效应迁移率提高了100%以上（2倍），迁移率（μFE）达到0.14 cm2/V s，通断电流比（ION/IOFF）为108。使用PECVD SiOx栅极介质，初步器件的μFE为0.4 cm2/V s， ION/IOFF为108。在柔性塑料衬底上采用PECVD SiNx和SiOx栅极介质的PQT-12 otft也被提出。这些结果证明了使用PECVD SiNx和SiOx作为OTFT电路集成的栅极介质的可行性，其中低温和大面积沉积的能力…
This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2/V s and on/off current ratio (ION/IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2/V s and ION/IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiNx and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabi...