Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors
Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors
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DOI：
10.1021/ja104864j
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发表时间：
2011-04-13
影响因子：
15
通讯作者：
Chang, Chih-hung
中科院分区：
文献类型：
--
作者：
Han, Seung-Yeol;Herman, Gregory S.;Chang, Chih-hung
以金属卤化物前驱体InCl(3)溶解于乙腈中，采用自旋镀膜工艺制备了溶液处理的In(2)O(3)薄膜晶体管（TFTs）。通过加入乙二醇可以控制和形成薄而均匀的薄膜。将合成的In(2)O(3)薄膜在200 ~ 600℃的空气或O(2)/O(3)大气环境中退火。在500℃空气条件下退火的tft具有55.26 cm(2) V(-1) s（-1）的高场效应迁移率，I(on)/I（off）电流比为10(7)。在200 ~ 300℃的O(2)/O(3)气氛下退火的O(3) tft表现出优异的n型晶体管性能，场效应迁移率为0.85 ~ 22.14 cm(2)， V(-1) s（-1）和I(on)/I（off）比值为10(5)~ 10(6)。O(2)/O(3)的退火气氛使溶液处理的In(2)O(3) tft在较低的处理温度下获得更高的性能。
Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 degrees C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 degrees C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 degrees C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) and V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature.