Ultra-Low-Inductance Power Module for Fast Switching Semiconductors

Ultra-Low-Inductance Power Module for Fast Switching Semiconductors
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用于快速开关半导体的超低电感电源模块

DOI：
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发表时间：
2013
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通讯作者：
J. Kolar
J. Kolar
中科院分区：
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文献类型：
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作者：
E. Hoene;A. Ostmann;Bi;Christoph Marczok;A. Musing;J. Kolar

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采用先进的封装技术，开发了一种使用碳化硅（SiC）器件的超低电感功率模块。开关单元电感由于没有用于芯片互连的键合线而显著降低。这是通过在DCB基板上使用PCB技术来提供更多互连层和设计自由度来实现的。制作后的测试结果表明了先进封装方法在开关性能方面的优越性。在关断期间几乎没有检测到过冲电压和振铃。测量的开关单元电感低于1 nH，这允许高速开关和/或高效率的应用由于低开关损耗。
An ultra-low-inductance power module using silicon carbide (SiC) devices has been developed by using an advanced packaging technology. The switching cell inductance was reduced significantly due to the absence of bond wires for chip interconnection. This was achieved by using PCB technologies on a DCB substrate to provide more interconnection layers and design freedom. The test result after fabrication showed the superiority of advanced packaging methods relating to switching behaviour. Almost no overshoot voltage and no ringing during turn-off were detected. The measured switching cell inductance went below 1nH which allows high speed switching and/or high efficiency applications by virtue of low switching losses.