Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials
Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials
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改进了由质子轰击 GaAs 光电导材料制成的发射器和探测器构建的太赫兹装置的特性
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发表时间：
2006
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通讯作者：
D. Houde
中科院分区：
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作者：
B. Salem;D. Morris;V. Aimez;J. Beauvais;D. Houde
我们报道了由质子轰击砷化镓光导材料制成的天线型器件中太赫兹辐射的相干产生和探测。我们的组合发射器/探测器设置允许我们获得从0.1到2太赫兹的大带宽。比较了半绝缘GaAs中单能和多能质子注入制备的天线发射体的性能。利用多能质子注入，获得了具有相同带宽的太赫兹辐射的改进发射。我们的研究结果表明，在光吸收区产生更多的缺陷会导致更高的损伤阈值偏置和更大的饱和光泵浦功率。
We report the coherent generation and detection of terahertz radiation from antenna-type devices made by using proton-bombarded GaAs photoconductive materials. Our combined emitter/detector set-up allows us to obtain a large bandwidth going from 0.1 up to 2 THz. We compare the performance of antenna emitters fabricated using mono- and multi-energy proton implantation in semi-insulating GaAs. Improved emission of terahertz radiation with a comparable bandwidth has been obtained using multi-energy proton implantation. Our results show that creating more defects in the optical absorption region gives rise to higher damage threshold biasing and larger saturation optical pumping power levels.