Substrate effect on the preparation of silicon carbide whiskers by chemical vapor deposition
Substrate effect on the preparation of silicon carbide whiskers by chemical vapor deposition
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DOI:
10.1016/0022-0248(96)00267-9
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发表时间:
1996-10
影响因子:
1.8
通讯作者:
I. Leu;Yang-Ming Lu;M. Hon
中科院分区:
文献类型:
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作者:
I. Leu;Yang-Ming Lu;M. Hon