Zero-Ohm transmission lines for millimetre-wave circuits in 28 nm digital CMOS
Zero-Ohm transmission lines for millimetre-wave circuits in 28 nm digital CMOS
复制标题
28 nm 数字 CMOS 毫米波电路的零欧姆传输线
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
F. Ellinger
中科院分区：
文献类型：
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作者：
G. Tretter;D. Fritsche;J. Leufker;C. Carta;F. Ellinger
介绍了28 nm体CMOS中具有极低特性阻抗的传输线的设计、分析、建模和测量。所谓的零欧姆线非常适合毫米波电路中的配电网络和交流短路，因为它们可以精确建模到极高的频率，并且因为它们不需要金属-绝缘体-金属电容器，而金属-绝缘体-金属电容器通常不适用于数字CMOS工艺。相反，它们依赖于简单的金属结构，这可以通过集成MOS电容器来增强。应用传输线理论，可以用模型来描述线，这些模型在长度和宽度上是可伸缩的。实现的测试结构展示了450 μm长度的紧凑线路，其在1 GHz以上的频率下将开路转换为接近0 Ω的阻抗。
The design, analysis, modelling and measurement of transmission lines with very low characteristic impedance in 28 nm bulk CMOS is presented. The so-called zero-Ohm lines are very well suited for power distribution networks and AC shorts in millimetre-wave circuits because of their accurate modelling up to extremely high frequencies and because they do not require metal–insulator–metal capacitors, which are usually not available in digital CMOS processes. Instead, they rely on simple metal structures, which can optionally be enhanced by integrating MOS capacitors. Applying transmission line theory, the lines can be described with models, which are scalable in length and width. Implemented test structures demonstrate a compact line of 450 μm length, which transforms an open circuit to an impedance close to 0 Ω for frequencies above 1 GHz.