Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
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DOI：
10.1126/science.1201938
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发表时间：
2011-04-29
期刊：
影响因子：
56.9
通讯作者：
Pop, Eric
中科院分区：
文献类型：
--
作者：
Xiong, Feng;Liao, Albert D.;Pop, Eric
相变材料（PCM）是非易失性数据存储和可重构电子学的有前途的候选者，但高编程电流对实现低功耗操作提出了挑战。我们用单壁和小直径多壁碳纳米管控制PCM比特。这种配置实现了0.5微安（置位）和5微安（复位）的编程电流，比现有技术的器件低两个数量级。脉冲测量使存储器切换具有非常低的能耗。对100多个器件的分析发现，编程电压和能量是高度可扩展的，可以分别低于1伏和1毫微微焦耳/位。
Phase-change materials (PCMs) are promising candidates for nonvolatile data storage and reconfigurable electronics, but high programming currents have presented a challenge to realize low-power operation. We controlled PCM bits with single-wall and small-diameter multi-wall carbon nanotubes. This configuration achieves programming currents of 0.5 microampere (set) and 5 microamperes (reset), two orders of magnitude lower than present state-of-the-art devices. Pulsed measurements enable memory switching with very low energy consumption. Analysis of over 100 devices finds that the programming voltage and energy are highly scalable and could be below 1 volt and single femtojoules per bit, respectively.