Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas
Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas
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纯惰性背景气体中脉冲激光沉积制备化学计量氧化铟薄膜
DOI：
10.1116/1.582122
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Takehito Yoshida
中科院分区：
文献类型：
--
作者：
Yuka Yamada;N. Suzuki;T. Makino;Takehito Yoshida
我们已经观察到了一个剧烈的变化，在未加热的玻璃基板上的纯氦（He）背景气体的脉冲激光沉积制备的氧化铟（In 2 O 3）薄膜的性质。在高于1.0托的高He压力下，可以制备透明的结晶In2O3膜，即使在没有引入氧气和衬底加热的情况下进行沉积。在较低的He压力，黑色不透明的薄膜沉积。这些结果可以解释为惰性背景气体的影响，这导致空间限制的烧蚀物种在高压和高温区域。在该区域中的促进氧化将抑制沉积膜中的氧缺乏。
We have observed a drastic change in the properties of indium oxide (In2O3) thin films prepared by pulsed laser deposition in a pure helium (He) background gas on unheated glass substrates. At high He pressures above 1.0 Torr, transparent crystalline In2O3 films could be prepared, even though the deposition was carried out without the introduction of oxygen gas and substrate heating. At lower He pressures, blackish opaque films were deposited. These results can be accounted for by the inert background gas effects, which cause spatial confinement of the ablated species in the high-pressure and high-temperature region. Facilitated oxidation in this region would suppress oxygen deficiency in the deposited films.