Hydrodynamic simulations for advanced SiGe HBTs
Hydrodynamic simulations for advanced SiGe HBTs
复制标题
先进 SiGe HBT 的流体动力学模拟
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
M. Schroter
中科院分区：
文献类型：
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作者：
G. Wedel;M. Schroter
硅锗（SiGe）异质结双极晶体管的最新发展已经清楚地表明，标准的漂移扩散模型不能预测器件的性能。因此，更先进的模拟方法是必要的，如模拟器与流体动力学（HD）传输模型。然而，为了进行现实的预测，需要适当校准的模型。在本文中，新的精确的分析模型的电子能量弛豫时间和电子迁移率的介绍，是适合于实施在HD TCAD模拟器。这些模型被校准到由玻尔兹曼输运方程（BTE）获得的模拟结果。并与先进的SiGe HBT的实验数据进行了比较。
The latest development of Silicon-Germanium (SiGe) HBTs has clearly demonstrated that the standard drift-diffusion model is not capable to predict the device performance. Thus more advanced simulation approaches are necessary such as simulators with hydrodynamic (HD) transport models. However, for realistic predictions, suitably calibrated models are required. In this paper, new accurate analytical models for the electron energy relaxation time and electron mobility are introduced that are suitable for implementation in HD TCAD simulators. These models are calibrated to simulation results obtained by the Boltzmann transport equation (BTE). Also a comparison with experimental data of an advanced SiGe HBT is given.