Characterization of silicon-rich nitride and oxynitride films for polysilicon gate patterning. I. Physical characterization
Characterization of silicon-rich nitride and oxynitride films for polysilicon gate patterning. I. Physical characterization
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用于多晶硅栅极图案化的富硅氮化物和氮氧化物薄膜的表征。
DOI：
10.1116/1.1388624
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
F. Celii
中科院分区：
文献类型：
--
作者：
E. Joseph;C. Gross;H. Liu;R. Laaksonen;F. Celii
我们报告的表征的富硅氮化物（SRN）和富硅氮氧化物（SRON）薄膜用于多晶硅栅极图案化。SRON和SRN薄膜的沉积等离子体增强化学气相沉积在一个商业的200毫米的反应器。膜的组成使用卢瑟福背散射测量，和氢浓度使用氦forwardscattering spectroscopies确定。对于典型的SRON膜，Si/O/N/H的原子百分比为1040/30/10/20，而典型的SRN膜具有1040/35/25的Si/N/H。厚度为3000-4000埃的毯式薄膜使用傅里叶变换红外（FTIR）光谱在400-4000 cm-1上进行光学表征，并显示出显著的Si-Si、Si-H和N-H键合的证据。在140-1000 nm范围内使用可变角度光谱椭圆偏振法获得光刻建模的光学常数的其他表征将在未来的文章中报道。SRN和SRON薄膜中显著的H含量和Si-Si键合导致了薄膜的热稳定性。
We report on the characterization of silicon-rich nitride (SRN) and silicon-rich oxynitride (SRON) films used in poly-Si gate patterning. SRON and SRN films were deposited by plasma-enhanced chemical vapor deposition in a commercial 200 mm reactor. Film composition was measured using Rutherford backscattering, and hydrogen concentration was determined using helium forwardscattering spectroscopies. For a typical SRON film, the atomic percentages of Si/O/N/H were ∼40/30/10/20, while a typical SRN film had Si/N/H of ∼40/35/25. Blanket films of 3000–4000 A thickness were characterized optically using Fourier-transform infrared (FTIR) spectroscopy over 400–4000 cm−1, and showed evidence for significant Si–Si, Si–H, and N–H bonding. Additional characterization using variable-angle spectroscopic ellipsometry over the range of 140–1000 nm, to obtain optical constants for lithography modeling, will be reported in a future article. The significant H content and Si–Si bonding of the SRN and SRON films gives rise to ...