Spectral characteristics of laser-induced plasma generated on porous silicon produced by metal-assisted etching
Spectral characteristics of laser-induced plasma generated on porous silicon produced by metal-assisted etching
复制标题
DOI：
10.1016/j.sab.2022.106531
复制
发表时间：
2022-09
期刊：
影响因子：
--
通讯作者：
Yusuke Shimazu;Ayumu Matsumoto;Sachiyo Hirai;Haruka Nakano;Kosuke Suzuki;S. Yae
中科院分区：
文献类型：
--
作者：
Yusuke Shimazu;Ayumu Matsumoto;Sachiyo Hirai;Haruka Nakano;Kosuke Suzuki;S. Yae
多孔硅（Si nano-hole array with straight pores）是一种具有潜在应用前景的激光诱导击穿光谱（LIBS）样品加载基底。在这项工作中，我们研究了激光诱导等离子体上产生的多孔硅与不同的孔深度（孔深度：约180，320，和990 nm）从光谱方面的特性。用多孔硅代替平板硅，可以提高Si I线的强度，其强度随多孔硅孔深的增加而增加，其增强因子达到45（孔深约为990 nm）。原子激发温度和原子序数密度随孔深的增加而增加，而Si Ⅱ线与Si Ⅰ线的强度比和氮Ⅰ线的强度随孔深的增加而减小。这些结果提供了一个洞察等离子体形成的纳米材料。
Porous silicon (Si) produced by metal-assisted etching using nanoparticles (Si nanohole array with straight pores) has potential as a sample loading substrate of laser-induced breakdown spectroscopy (LIBS). In this work, we investigated the characteristics of laser-induced plasma generated on the porous Si with different pore depths (pore depth: approximately 180, 320, and 990 nm) from spectroscopic aspects. The intensity of Si I line was enhanced by using the porous Si instead of a flat Si, it increased with increasing the pore depth of porous Si, and its enhancement factor reached 45 (pore depth: approximately 990 nm). The atomic excitation temperature and atomic number density increased with increasing the pore depth, whereas the intensity ratio of Si II line to Si I line and the intensity of nitrogen I line decreased. These results provide an insight into the plasma formation on nanomaterials.