Finite-Element Modeling of Extraordinary Magnetoresistance in Thin Film Semiconductors with Metallic Inclusions
Finite-Element Modeling of Extraordinary Magnetoresistance in Thin Film Semiconductors with Metallic Inclusions
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DOI：
10.1103/physrevb.64.184410
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发表时间：
2001-10
影响因子：
3.7
通讯作者：
J. Moussa;L. Ram-Mohan;J. Sullivan;Tao Zhou;D. Hines;S. Solin
中科院分区：
文献类型：
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作者：
J. Moussa;L. Ram-Mohan;J. Sullivan;Tao Zhou;D. Hines;S. Solin
利用有限元分析方法，计算了最近报道的具有同心嵌入的Au不均匀性的InSb的改进的货车der Pauw盘的室温异常磁电阻，不使用任何可调参数，作为外加磁场和不均匀性的尺寸/几何形状的函数。有限元结果与精确解析结果几乎一致，与相应的实验测量结果也非常吻合。此外，还导出了InSb/Au复合系统的一些重要性质，如电流和盘周边电势的场依赖性。研究发现，电磁辐射和输出电压都敏感地依赖于电流和电压端口的位置和大小。
Using finite element analysis, the room temperature extraordinary magnetoresistance recently reported for a modified van der Pauw disk of InSb with a concentric embedded Au inhomogeneity has been calculated, using no adjustable parameters, as a function of the applied magnetic field and the size/geometry of the inhomoge-neity. The finite element results are nearly identical to exact analytic results and are in excellent agreement with the corresponding experimental measurements. Moreover, several important properties of the composite InSb/Au system such as the field dependence of the current flow and of the potential on the disk periphery have been deduced. It is found that both the EMR and output voltage depend sensitively on the placement and size of the current and voltage ports.