Development of highly efficient micro energy harvesters with MgHf-codoped AlN piezoelectric films
Development of highly efficient micro energy harvesters with MgHf-codoped AlN piezoelectric films
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MgHf共掺杂AlN压电薄膜高效微型能量收集器的开发
DOI：
10.1109/memsys.2018.8346524
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
H. Kuwano
中科院分区：
文献类型：
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作者：
Hung Nguyen;L. Van Minh;H. Oguchi;H. Kuwano
本文介绍了利用镁铪共掺杂氮化铝（(MgHf)<sub>x</sub>Al<sub>1 - x</sub>N）压电薄膜开发高功率密度振动微型能量采集器（VEHs）的情况。这些器件使微型能量采集器的性能有了显著提高。归一化功率密度（NPD）达到34.9 mW·g<sup>-2</sup>·cm<sup>-3</sup>，比已发表的最佳氮化铝基器件提高了18倍。本研究中的器件由一个(MgHf)<sub>x</sub>Al<sub>1 - x</sub>N/硅悬臂梁和一个钨/硅质量块组成。我们使用氮化铝和镁铪靶材，在氩气/氮气环境中通过离子束溅射，在铂/钛/绝缘体上硅（SOI）衬底上成功生长了镁铪掺杂量χ = 0、0.05和0.10的压电薄膜。这些薄膜的发电品质因数（FoM）为22 GPa，比氮化铝大3倍。结果证实了基于(MgHf)<sub>x</sub>Al<sub>1 - x</sub>N的振动微型能量采集器作为无线传感器网络（WSNs）电源的巨大潜力，这对实现物联网（IoT）至关重要。
This paper presents the development of high power-density vibration micro energy harvesters (VEHs) exploiting MgHf-codoped AlN ((MgHf)<inf>x</inf>Al<inf>1−x</inf>N) piezoelectric films. The devices provided a significant improvement in performance of micro-energy harvesters. A normalized power density (NPD) of 34.9 mW.g<sup>−2</sup>.cm<sup>−3</sup> was increased 18-fold than that of the best published AlN-based device. The devices in this study consisted of a (MgHf)<inf>x</inf>Al<inf>1−x</inf>N/Si cantilever and a W/Si proof-mass. Our piezoelectric films with MgHf dopant of χ = 0, 0.05, and 0.10 were grown successfully on Pt/Ti/SOI substrates by an ion-beam sputtering using an AlN and a MgHf targets in Ar/N2 ambient. The films offered a power-generation figure of merit (FoM) of 22 GPa, which is 3-fold larger than that of AlN. The results confirmed the high potential of (MgHf)<inf>x</inf>Al<inf>1−x</inf>N-based VEHs as power sources for wireless sensor networks (WSNs) crucial to realize Internet of Things (IoT).