Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration
Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration
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DOI：
10.1109/sispad54002.2021.9592592
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发表时间：
2021-09
期刊：
影响因子：
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通讯作者：
Guanyu Zhou;Tian Sun;Rehan Younas;C. Hinkle
中科院分区：
文献类型：
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作者：
Guanyu Zhou;Tian Sun;Rehan Younas;C. Hinkle
单片3D异构集成是实现集成电路技术中功率和性能持续扩展的最具成本效益的途径。在本文中，我们讨论了各种方法，材料和设备的概念，以帮助克服所施加的限制，把有源器件在上层。我们的重点是在低处理温度下实现更好的材料，用于逻辑，存储器和密集互连，利用独特的物理特性来克服当前3D集成器件性能的限制。
Monolithic 3D heterogeneous integration is the most cost effective route to realize continued scaling in power and performance in integrated circuit technologies. In this paper, we discuss a variety of methods, materials, and device concepts to help overcome the constraints imposed by putting active devices in the upper levels. Our focus is on realizing better materials at low processing temperature for logic, memory, and dense interconnects taking advantage of unique physics to surmount current limitations in 3D integrated device performance.