BEEM imaging and spectroscopy of buried structures in semiconductors
BEEM imaging and spectroscopy of buried structures in semiconductors
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半导体埋入结构的 BEEM 成像和光谱
DOI：
10.1016/s0370-1573(00)00119-8
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Kozhevnikov
中科院分区：
文献类型：
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作者：
V. Narayanamurti;M. Kozhevnikov
弹道电子发射显微镜 (BEEM) 已被证明是对半导体结构的空间和电子特性进行纳米级表征的强大工具。在本文中，我们将讨论真弹道和准弹道热载流子输运中 BEEM 实验和理论的一般方面。我们将回顾使用 BEEM 成像和光谱学研究金属-半导体和金属-绝缘体-半导体界面、埋入式半导体异质结和新型量子物体的现状和最新进展。讨论了各种理论 BEEM 模型，并检验了它们描述 BEEM 实验的能力。 BEEM 光谱中特别关注金属基层、金属-半导体界面和半导体异质结构中电子散射的作用。
Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for nanometer-scale characterization of the spatial and electronic properties of semiconductor structures. In this article, we will discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. We will review the current state and recent progress in the use of the BEEM imaging and spectroscopy to study metal-semiconductor and metal-insulator-semiconductor interfaces, buried semiconductor heterojunctions and novel quantum objects. Various theoretical BEEM models are discussed, and their ability to describe BEEM experiments is examined. Special attention is drawn to the role of the electron scattering in the metal base layer, at the metal–semiconductor interface and in the semiconductor heterostructure on BEEM spectra.