Stretchable ferroelectric nanoribbon and the mechanical stability of its domain structures
Stretchable ferroelectric nanoribbon and the mechanical stability of its domain structures
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可拉伸铁电纳米带及其畴结构的机械稳定性
DOI：
10.1063/1.5037213
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发表时间：
2018
影响因子：
4
通讯作者：
Yue Zheng
中科院分区：
文献类型：
--
作者：
Yun Chen;Jing Yu;Liqun Xiong;Weiming Xiong;Xiaoyue Zhang;Yue Zheng
在机械变形下保持存储信息的高稳定性是可拉伸电子器件实际应用的基本要求。除了储存稳定性之外，大变形和易于制造也是可拉伸装置的期望特征。在这项工作中，我们使用波浪形的P（VDF-TrFE）纳米带，以实现超过20%的机械变形，和制造过程中消除了复杂的蚀刻步骤和光刻掩模的需要。以铁电畴的形式写在带上的存储信息在大的机械变形后能够保持不变。在10 000次拉伸/释放循环后，偏振取向保持相同，强度变化很小。这些具有大变形和高稳定性的P（VDF-TrFE）纳米带在未来可拉伸电子器件的存储性能增强方面具有巨大的潜力，在机械变形下保持存储信息的高稳定性是可拉伸电子器件实际应用的基本要求。除了储存稳定性之外，大变形和易于制造也是可拉伸装置的期望特征。在这项工作中，我们使用波浪形的P（VDF-TrFE）纳米带，以实现超过20%的机械变形，和制造过程中消除了复杂的蚀刻步骤和光刻掩模的需要。以铁电畴的形式写在带上的存储信息在大的机械变形后能够保持不变。在10 000次拉伸/释放循环后，偏振取向保持相同，强度变化很小。这些具有大变形和高稳定性的P（VDF-TrFE）纳米带在未来可拉伸电子产品的增强存储性能方面表现出巨大的潜力。
The high stability to maintain stored information under mechanical deformation is an essential requirement for the practical applications of stretchable electronics. In addition to storage stability, large deformation and easy fabrication are also desirable features for stretchable devices. In this work, we use wavy P(VDF-TrFE) nanoribbons to achieve a mechanical deformation of more than 20%, and the fabricating procedure eliminates the need for complicated etching steps and lithographic masks. The stored information, which is written on the ribbons in the form of ferroelectric domains, is able to remain unchanged after large mechanical deformation. After 10 000 stretching/releasing cycles, the polarization orientation remains the same with very little change of the intensity. These P(VDF-TrFE) nanoribbons with large deformation and high stability demonstrate great potential for the enhanced storage performance of future stretchable electronics.The high stability to maintain stored information under mechanical deformation is an essential requirement for the practical applications of stretchable electronics. In addition to storage stability, large deformation and easy fabrication are also desirable features for stretchable devices. In this work, we use wavy P(VDF-TrFE) nanoribbons to achieve a mechanical deformation of more than 20%, and the fabricating procedure eliminates the need for complicated etching steps and lithographic masks. The stored information, which is written on the ribbons in the form of ferroelectric domains, is able to remain unchanged after large mechanical deformation. After 10 000 stretching/releasing cycles, the polarization orientation remains the same with very little change of the intensity. These P(VDF-TrFE) nanoribbons with large deformation and high stability demonstrate great potential for the enhanced storage performance of future stretchable electronics.