Quantifying Power Flow Processes Mediated by Spin Currents

Quantifying Power Flow Processes Mediated by Spin Currents
复制标题

DOI:
10.1021/acsaelm.0c01138
复制
发表时间:
2020-10
期刊:
arXiv: Materials Science
影响因子:
--
通讯作者:
K. Nakahashi;Kohei Takaishi;Takayuki Suzuki;K. Kanemoto
K. Nakahashi;Kohei Takaishi;Takayuki Suzuki;K. Kanemoto
中科院分区:
其他
文献类型:
--
作者:
K. Nakahashi;Kohei Takaishi;Takayuki Suzuki;K. Kanemoto

文献摘要

相似文献

通过自旋电流的能量传播被认为是实现无耗散能量传播的最有前途的方法之一,但是通过自旋电流的功率流关于功率流的效率以及功率损失发生的位置一直不清楚。在这里,我们全面评估的自旋电流介导的功率流过程中的双层器件组成的铁磁金属(FM)和非磁性金属(NM)层实现实验评价从微波吸收到电动势(EMF)输出的每个过程。在EMF输出期间,通过薄FM层的铁磁共振(FMR)的吸收功率直接使用天线探针系统在操作中测量。通过严格的EMF谱线宽度评估,估算了通过自旋泵浦吸收功率到NM层中的转移效率。采用与太阳电池类似的分析模型,在160 mW微波辐照下,通过逆自旋霍尔效应,自旋泵浦功率到外负载的最大传输效率为4.2 × 10 ~(-8)。降低效率的主要因素是NM层的低电阻率和界面损耗。这些发现增强了自旋电流器件的适用性,并有助于发展自旋为基础的技术。
Energy propagation through spin currents has been expected to be one of the most promising ways to achieve dissipation-free energy propagation, but the power flow via spin currents has been unclear as to the efficiency of the power flow and where the power losses occur. Here, we comprehensively evaluate the spin current-mediated power flow process in the bilayer device consisting of ferromagnetic metal (FM) and non-magnetic metal (NM) layers by realizing experimental evaluations for each process from the microwave absorption to electromotive force (EMF) output. The absorption power by ferromagnetic resonance (FMR) of the thin FM layer during the EMF output is directly measured in operando using an antenna probe system. The transfer efficiency of the absorption power into the NM layer by spin pumping is estimated from strict linewidth evaluation of EMF spectra. The maximum transfer efficiency of the spin pumping power to the external load via the inverse spin Hall effect is determined to be 4.2*10-8 under 160mW microwave irradiation using an analysis model similar to that for solar cells. The main factors reducing the efficiency are found to be low resistivity of the NM layer and the interface loss. These findings enhance the applicability of spin current devices and contribute to the development of spin-based technologies.