4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
复制标题
适用于高温操作的 4H-SiC N-MOSFET 逻辑电路
DOI：
10.4028/www.scientific.net/msf.679-680.734
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
L. Frey
中科院分区：
文献类型：
--
作者：
M. Le;M. Grieb;Frederik F. Schrey;H. Schmitt;V. Haeublein;A. Bauer;H. Ryssel;L. Frey
研究了常关型4 H-SiC MOSFET在逻辑门电路中的高温适用性。Fowler-Nordheim分析表明，在升高的温度下的有效隧穿势垒高度降低。碳材料诱导的陷阱辅助隧穿被认为是负责任的机制。然而，即使在400°C下，MOS器件的可靠性也是极好的，外推的临界场为2.69MV/cm，持续10年的介质击穿时间。逻辑门的开关行为也在25°C和400°C之间表征。使用这些逻辑门，一个完全集成的边缘触发器的构建和高温工作进行了演示。
The suitability of normally-off 4H-SiC MOSFETs for high temperature operation in logic gates is investigated. Fowler-Nordheim analysis shows a lowering of the effective tunneling barrier height at elevated temperatures. Trap assisted tunneling induced by carbon interstitials is proposed as the responsible mechanism. Nevertheless, reliability of MOS devices even at 400°C is excellent with an extrapolated critical field of 2.69MV/cm for a 10 year time to dielectric breakdown. The switching behavior of logic gates is also characterized between 25°C and 400°C. Using these logic gates, a fully integrated edge triggered flip-flop is build and high temperature operation is demonstrated.