Self-accelerating oxidation on Si(111)7×7 surfaces studied by real-time photoelectron spectroscopy
Self-accelerating oxidation on Si(111)7×7 surfaces studied by real-time photoelectron spectroscopy
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实时光电子能谱研究Si(111)7×7表面自加速氧化
DOI：
10.1002/sia.5615
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发表时间：
2014
影响因子：
1.7
通讯作者：
and Y. Takakuwa
中科院分区：
文献类型：
--
作者：
J. Tang;K. Nishimoto;S. Ogawa;A. Yoshigoe;S. Ishidzuka;D. Watanabe;Y. Teraoka;and Y. Takakuwa
利用真实的时间X射线光电子能谱研究了氧化物/Si（111）界面在室温（RT）和550 °C下的氧化过程。在室温下的氧化中观察到自加速界面氧化，但在550 °C下的氧化中未观察到。在室温下的自加速过程中，对应于氧化物/Si（111）界面下方的第二层中的应变Si原子的分量Siβ显著增加。结果表明，界面氧化速率与氧化物/Si（111）界面应变的产生密切相关。提出了Si（111）7 × 7表面自加速界面氧化模型，该模型考虑了点缺陷（发射Si原子+空位）的产生.版权所有© 2014约翰威利父子有限公司.
Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real‐time X‐ray photoelectron spectroscopy. Self‐accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self‐acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siβ, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self‐accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed. Copyright © 2014 John Wiley & Sons, Ltd.