Composition Control of CdSxSe1-x Thin Layers Grown on CdS Substrate by a Solid-State Diffusion Technique
Composition Control of CdSxSe1-x Thin Layers Grown on CdS Substrate by a Solid-State Diffusion Technique
复制标题
通过固态扩散技术在 CdS 基底上生长的 CdSxSe1-x 薄层的成分控制
DOI：
10.1143/jjap.21.639
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
K. Mochizuki
中科院分区：
文献类型：
--
作者：
K. Mochizuki
采用固相扩散法在硫化镉衬底上生长了具有梯度成分的CdSxSe1-x薄膜。通过在具有固定分压比(PS2/PSe2)的独立调节的硫和硒的分压下对CDS衬底进行热处理来控制生长层的表面成分X。结果表明，在较宽的组成范围内，成功地控制了表面成分X。还尝试控制具有固定成分X的表面层的化学计量偏差。
CdSxSe1-x layers with graded-composition were grown on a CdS substrate by a solid-state diffusion technique. Efforts were made to control the surface composition X of the growth layers CdSxSe1-x by heat-treating the CdS substrate under independently-regulated partial pressures of sulfur and selenium with a fixed partial pressure ratio (PS2/PSe2). The results confirmed that the surface composition X was controlled successfully over a wide composition range of CdSxSe1-x. Attempts were also made to control the deviation from stoichiometry of the surface layers with a fixed composition X.