Employing time-resolved terahertz spectroscopy to analyze carrier dynamics in thin-film Cu2ZnSn(S,Se)4 absorber layers
Employing time-resolved terahertz spectroscopy to analyze carrier dynamics in thin-film Cu2ZnSn(S,Se)4 absorber layers
复制标题
采用时间分辨太赫兹光谱分析薄膜 Cu2ZnSn(S,Se)4 吸收层中的载流子动力学
DOI:
10.1063/1.4884817
复制
发表时间:
2014
影响因子:
4
通讯作者:
J. B. Baxter
中科院分区:
文献类型:
--
作者:
G. Guglietta;K. Choudhury;J. Caspar;J. B. Baxter
We report the application of time-resolved terahertz spectroscopy (TRTS) to measure photoexcited carrier lifetimes and mobility, and to determine recombination mechanisms in Cu2ZnSn(S,Se)4 (CZTSSe) thin films fabricated from nanocrystal inks. Ultrafast time resolution permits tracking the evolution of carrier density to determine recombination rates and mechanisms. The carrier generation profile was manipulated by varying the photoexcitation wavelength and fluence to distinguish between surface, Shockley-Read-Hall (SRH), radiative, and Auger recombination mechanisms and determine rate constants. Surface and SRH recombination are the dominant mechanisms for the air/CZTSSe/SiO2/Si film stack. Diffusion to, and then recombination at, the air-CZTSSe interface occurred on the order of 100 picoseconds, while SRH recombination lifetimes were 1–2 nanoseconds. TRTS measurements can provide information that is complementary to conventional time-resolved photoluminescence measurements and can direct the design of efficient thin film photovoltaics.