Finite depth spherical well model for excited states of ultrasmall semiconductor particles: an application
Finite depth spherical well model for excited states of ultrasmall semiconductor particles: an application
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超小半导体粒子激发态的有限深度球阱模型：应用
DOI：
10.1021/j100166a028
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Y. Nosaka
中科院分区：
文献类型：
--
作者：
Y. Nosaka
提出了一个计算有限深势阱模型能级的公式。用该模型估算了电子-空穴对的库仑相互作用能。超小CdS粒子的激发能与文献值相当。本文提出的激发能计算方法对任何半导体粒子都是适用的。一个虚拟的半导体球外的导带电子泄漏被发现是成比例的实验获得的光致表面电子转移率。
A formulato calculate the energy level with a finite depth potential well model is proposed. Coulomb interaction energy of the electron-hole pair was estimated with thismodel. The excitation energy of an ultrasmall CdS particle was comparable with literature values. The present calculation of excitation energy is easily adoptable to any semiconductor particle. A virtual leakage of the conduction band electron outside the semiconductor sphere is found to be proportional to the experimentally obtained rate of photoinduced surface electron transfer.