Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
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DOI：
10.1063/1.2202190
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发表时间：
2006-05
影响因子：
4
通讯作者：
M. Gutiérrez;M. Herrera;D. González;R. García;M. Hopkinson
中科院分区：
文献类型：
--
作者：
M. Gutiérrez;M. Herrera;D. González;R. García;M. Hopkinson
本文研究了分子束外延多层In(Ga)As/GaAs量子点(QD)结构垂直堆积过程中弹性各向异性应变场的影响。这一效应解释了垂直相关叠加中量子点的放大以及获得量子点垂直反相关叠加的可能性。这些结构中的反相关组态不仅与量子点尺寸和层间距有关，而且还与量子点密度有关。通过适当地选择这些结构参数，可以得到尺寸分布更窄的以量子点为中心的立方结构，这与通常观察到的垂直相关的量子点形成了鲜明的对比。
This letter shows the effect of the elastic anisotropic strain field in the vertical stacking for multilayer In(Ga)As∕GaAs quantum dot (QD) structures grown by molecular beam epitaxy. This effect explains the QD enlargement in vertical correlated stacking and the possibility to obtain QD vertical anticorrelated stacking. The anticorrelation configuration in these structures is dependent not only on the QD size and on the interlayer spacing but also on the QD density. With appropriate choice of these structural parameters, a QD body centered cubic arrangement can be produced with a narrower size distribution which is in marked contrast to commonly observed vertically correlated QDs.