Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions
Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions
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DOI：
10.1016/j.apsusc.2010.03.018
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发表时间：
2010-07
影响因子：
6.7
通讯作者：
A. Plecenik;M. Tomášek;T. Plecenik;M. Truchlý;J. Noskovič;M. Zahoran;T. Roch;M. Belogolovskii
中科院分区：
文献类型：
--
作者：
A. Plecenik;M. Tomášek;T. Plecenik;M. Truchlý;J. Noskovič;M. Zahoran;T. Roch;M. Belogolovskii
Current–voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7−xthin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2K to 300K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7−xthin film–PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7−xfilms in the nano-scale vicinity of the junction interface under applied electrical fields.
