Room temperature detection of sub-terahertz radiation in double-grating-gate transistors.
Room temperature detection of sub-terahertz radiation in double-grating-gate transistors.
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DOI：
10.1364/oe.18.006024
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发表时间：
2010-03
期刊：
影响因子：
3.8
通讯作者：
D. Coquillat;S. Nadar;F. Teppe;N. Dyakonova;S. Boubanga-Tombet;W. Knap;T. Nishimura;T. Otsuji;Y. Meziani;G. M. Tsymbalov;V. Popov
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文献类型：
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作者：
D. Coquillat;S. Nadar;F. Teppe;N. Dyakonova;S. Boubanga-Tombet;W. Knap;T. Nishimura;T. Otsuji;Y. Meziani;G. M. Tsymbalov;V. Popov
研究了大面积InGaP/InGaAs/GaAs双栅异质结在亚太赫兹（0.24 THz）范围内的室温光伏非共振探测。半定量估计的特征检测长度相结合的自洽计算的电场激发的结构，由传入的太赫兹辐射允许我们定量解释的结果，并得出结论，这种检测主要发生在该地区的强振荡电场激发的耗尽部分的通道。
Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.