Effect of the substrate temperature on the electrical and structural properties of spray-deposited SnO2:F thin films
Effect of the substrate temperature on the electrical and structural properties of spray-deposited SnO2:F thin films
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DOI：
10.1016/j.mssp.2009.09.003
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发表时间：
2009-06
影响因子：
4.1
通讯作者：
S. Ikhmayies;R. Ahmad-bitar
中科院分区：
文献类型：
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作者：
S. Ikhmayies;R. Ahmad-bitar
采用喷雾热解法制备了SnO2：F薄膜，衬底温度为360~480℃，通过对薄膜的I-V特性、X射线衍射谱和扫描电子显微镜图像的分析，研究了不同衬底温度对SnO2：F薄膜电学和结构性能的影响。随着衬底温度的升高，薄膜的I-V特性得到改善，即薄膜的电阻率从98Ωcm降至0.22 Mpa cm。400℃和480℃的X射线衍射图表明，薄膜为多晶薄膜，在较低的衬底温度下沉积的薄膜的衍射图上出现了两个晶体生长方向，分别对应于(110)和(200)晶面的反射。随着衬底温度的升高，出现了新的晶体生长方向，与(101)面上的反射相对应。在较高的衬底温度下，(110)和(200)晶面也有轻微的生长，这意味着晶体的生长得到了促进，晶粒尺寸也有所增大。扫描电子显微镜图像证实了上述结果，并且衬底温度越高，晶粒越大，晶化程度越高。
SnO2:F thin films were prepared by the spray pyrolysis (SP) technique at substrate temperature in the range 360–480°C. The effect of varying the substrate temperature on the electrical and structural properties of the films was investigated by studying the I–V characteristics, the X-ray diffraction patterns (XRD), and the scanning electron microscope images (SEM). The I–V characteristics of the films were improved by increasing the substrate temperature, i.e. the resistivity of the films had decreased from 98 to 0.22Ωcm. The X-ray diffraction patterns taken at 400 and 480°C showed that the films are polycrystalline and two directions of crystal growth appeared in the difractogram of the film deposited at the lower substrate temperature, which correspond to the reflections from the (110) and (200) planes. With the increase in the substrate temperature a new direction of crystal growth appeared, which corresponds to the reflection from the (101) plane. Also the (110) and (200) lines were slightly grown at the higher substrate temperature, which means the crystal growth was enhanced and the grain size had increased. The SEM images confirmed these results and showed larger grains and more crystallization for the higher substrate temperature too.