Formation of Cu‐rich particles on the surface of YBa2Cu3O7−x thin film grown by in situ off‐axis sputtering
Formation of Cu‐rich particles on the surface of YBa2Cu3O7−x thin film grown by in situ off‐axis sputtering
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DOI：
10.1063/1.356302
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发表时间：
1994-02
影响因子：
3.2
通讯作者：
Z. Han;T. Selinder;U. Helmersson
中科院分区：
文献类型：
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作者：
Z. Han;T. Selinder;U. Helmersson
系统地进行了在高质量YBa 2Cu 3 O 7 −x薄膜表面形成富Cu颗粒的实验。使用原位离轴溅射在（001）LaAlO 3上生长膜。在我们的实验中观察到的颗粒形成可以使用基于捕获区的概念的经典薄膜成核和生长模型来描述。在670 ~ 750 °C的温度范围内，在沉积初期，晶核密度达到饱和，富Cu粒子的形成属于初始完全凝聚的情况。粒子N的饱和核密度随温度的升高而降低。还发现，N是沉积速率依赖性和衬底依赖性。基于实验，形成颗粒的Cu原子的表面扩散的活化能估计为在该温度范围内为1.5eV。
Experiments on the formation of Cu‐rich particles on the surface of high quality YBa2Cu3O7−x thin films have been carried out systematically. The films on (001) LaAlO3 were grown using in situ off‐axis sputtering. The particle formation observed in our experiment can be described using a classical thin film nucleation and growth model based on the concept of capture zones. In the temperature range from 670 to 750 °C, the nuclei density saturates at the early stage of deposition, and the formation of the Cu‐rich particle belongs to the case of initial complete condensation. The saturation nuclei density of the particles N decreases as the temperature increases. It has been also found that N is deposition rate dependent and substrate dependent. Based on the experiments, the activation energy for surface diffusion of the Cu atoms that form the particles is estimated to be 1.5 eV in this temperature range.