Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
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DOI：
10.1063/1.3703467
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发表时间：
2012-04-01
影响因子：
3.2
通讯作者：
Phillips, Jamie D.
中科院分区：
文献类型：
--
作者：
Hwang, Jinyoung;Martin, Andrew J.;Phillips, Jamie D.
使用导纳光谱研究了具有 II 型能带排列的 GaSb/GaAs 量子点的电子结构和热载流子捕获和逃逸机制。观察到与受限量子点态相对应的清晰特征，提取的激活能为 0.337 eV，热捕获截面范围为 2.10 x 10(-16) 至 1.19 x 10(-13) cm(2)。 GaSb/GaAs 量子点的热发射率明显低于之前报道的 I 型系统，其中光发射预计将成为太阳聚光下中波段太阳能电池的主要过程。 (C) 2012 年美国物理研究所。 [http://dx.土井。 org/10.1063/1.3703467]
The electronic structure and thermal carrier capture and escape mechanisms are studied for GaSb/GaAs quantum dots with a type-II band alignment using admittance spectroscopy. Clear signatures are observed corresponding to confined quantum dot states with extracted activation energy of 0.337 eV and the thermal capture cross section in the range from 2.10 x 10(-16) to 1.19 x 10(-13) cm(2). The thermal emission rates in the GaSb/GaAs quantum dots are significantly lower than prior reports for type-I systems, where optical emission is predicted to be the dominant process in an intermediate band solar cells under solar concentration. (C) 2012 American Institute of Physics. [http://dx. doi. org/10.1063/1.3703467]