Low Threshold Light Emission from Reverse-Rib n+ Ge Cavity Made by P Diffusion
Low Threshold Light Emission from Reverse-Rib n+ Ge Cavity Made by P Diffusion
复制标题
P 扩散制成的反向肋 n Ge 腔的低阈值发光
DOI：
10.1149/07508.0193ecst
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
K. Wada
中科院分区：
文献类型：
--
作者：
M. Yako;Chan;D. Ahn;Y. Ishikawa;K. Wada
Ge激光器有望成为电子光子集成、CMOS兼容片上光源关键问题的解决方案。锗激光器技术仍然存在两个重要问题：大阈值电流 (Ith) 和 Ge 外延结构的多重生长可共同集成光电探测器等 Ge 器件，其 pn 结轮廓与 Ge 激光器有很大不同。报道的 Ith 值比 III-V 激光器的 Ith 值大两个数量级，并且 Ge 中的原位重 n 型掺杂可以防止形成各种 pn 结构，除非执行具有不同掺杂分布的多重生长。为了解决这些问题，本文提出了一种“反向肋”Ge外延结构与异位P扩散相结合的重n型掺杂，而不是原位掺杂。 P扩散n+-Ge反向肋结构首先验证了低光泵浦功率下光发射的清晰阈值行为。
Ge laser is expected as a solution for a key issue in electronicphotonic integrations, CMOS compatible on-chip light source. Two important issues remain in Ge laser technologies; the large threshold current (Ith) and the multiple growth of Ge epi-structures to co-integrate Ge devices such as photodetectors, whose pn junction profiles are much different from the Ge lasers. The reported Ith values are larger than those for III-V lasers by two orders of magnitude, and an in-situ heavily n-type doping in Ge prevents to form various pn structures unless the multiple growth with different doping profiles are performed. To solve these issues, the present paper proposes a" reverse-rib" Ge epi-structure in combination with an ex-situ P diffusion for heavily n-type doping, instead of in-situ doping. P-diffused n+-Ge reverse-rib structures first verify a clear threshold behavior of light emission at a low power of optical pumping.