Tuning of Resistance of Nanogaps Using Field-Emission-Induced Electromigration with Feedback Control Scheme
Tuning of Resistance of Nanogaps Using Field-Emission-Induced Electromigration with Feedback Control Scheme
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使用场发射感应电迁移和反馈控制方案调节纳米间隙的电阻
DOI：
10.1109/nano.2013.6721060
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
R. Suda and J. Shirakashi
中科院分区：
文献类型：
--
作者：
M. Ando;S. Akimoto;R. Suda and J. Shirakashi
我们报告了一种新研究的技术，利用场发射电流引起的电迁移现象来调节纳米间隙的隧道电阻，称为“激活”方法。首先，在 SiO2/Si 基底上定义了间隔 20-50 nm 的平面型初始 Ni 纳米间隙。然后，在室温下使用电流源向初始 Ni 纳米间隙施加偏置电流。在这里，我们提出了激活过程中的反馈方法，以便精确控制室温下纳米间隙的电阻。我们将这种方法称为“反馈控制激活（FCA）”，结果表明，与没有反馈方案的传统激活相比，使用FCA程序成功地改善了纳米间隙隧道电阻的控制特性。这些结果表明反馈方法对于使用激活方法稳定控制纳米间隙的隧道电阻是有用的。
We report a newly investigated technique for the tuning of tunnel resistance of nanogaps using electromigration phenomena induced by a field emission current, which is called “activation” method. First, Planar-type initial nanogaps of Ni separated by 20-50 nm were defined on SiO2/Si substrates. Then, a bias current was applied to the initial Ni nanogaps at room temperature using a current source. Here, we propose a feedback approach during activation procedures, in order to precisely control the resistance of nanogaps at room temperature. We call this method “feedback-controlled activation (FCA)”, and it is revealed that control characteristics of tunnel resistance of nanogaps are successfully improved using FCA procedure, as compared with conventional activation without feedback scheme. These results indicate that a feedback approach is useful for the stable control of tunnel resistance of nanogaps using activation method.