Conformal doping mechanism for fin field effect transistors by self-regulatory plasma doping with AsH3 plasma diluted with He
Conformal doping mechanism for fin field effect transistors by self-regulatory plasma doping with AsH3 plasma diluted with He
复制标题
通过 He 稀释的 AsH3 等离子体自调节等离子体掺杂实现鳍式场效应晶体管的共形掺杂机制
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Osamu Nishijima
中科院分区：
文献类型：
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作者：
Y. Sasaki;K. Okashita;Bunji Mizuo;M. Kubota;M. Ogura;Osamu Nishijima
为实现硅n沟道鳍场效应晶体管(FinFET)源漏扩展区所需的n型共形掺杂，确定了用He稀释的AsH3等离子体进行自调节等离子体掺杂的关键参数。二维扫描扩展电阻显微镜显示，该技术有利于翅片结构的共形掺杂。得到了良好的电阻率一致性，翅片侧壁与翅片顶面的电阻率之比为0.85。高的总气体流量和高的AsH3浓度是实现共形掺杂的重要条件。结果表明，较短的气体停留时间和较高的AsH3和He摩尔浓度是实现有限分解次数下大量掺杂的必要物理参数。当这些条件实现时，足够多的砷被提供给顶面和侧壁，从而使其成为可能。
Key parameters for achieving n-type conformal doping desirable for source/drain extension regions of Si n-channel fin field effect transistors (FinFETs) have been determined for self-regulatory plasma doping using an AsH3 plasma diluted with He. Two-dimensional scanning spreading resistance microscopy revealed that this technique is advantageous for conformal doping of fin structures. An excellent resistivity conformality was obtained with the ratio of the resistivity of fin sidewall to that of the fin top surface being 0.85. A high total gas flow rate and a high AsH3 concentration were found to be important conditions for realizing conformal doping. The results revealed that a short gas residence time and high molar concentrations of AsH3 and He in the process chamber are essential physical parameters for realizing large amounts of dopant species with finite decomposition times. When these conditions are realized, a sufficiently large amount of As is supplied to both the top surface and the sidewall so t...