Application of High-pressure Annealing Process to Dual Damascene Copper Interconnections
Application of High-pressure Annealing Process to Dual Damascene Copper Interconnections
复制标题
高压退火工艺在双镶嵌铜互连中的应用
DOI：
10.2320/matertrans.43.1605
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
T. Yoshikawa
中科院分区：
文献类型：
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作者：
Onishi Takashi;T. Yoshikawa
我们利用高压退火法对相关的工艺技术进行了详细的研究，以便将铜互连线完美地嵌入通孔或沟槽中，从而确定了一种提高电路可靠性的工艺技术。在本研究中，对铜互连线在高压Ar气氛(150 Mpa)中进行热处理，以防止微小空洞的产生，改善多晶取向的分布，提高铜与TaN(阻挡层)的结合强度，从而优化形成嵌入型铜互连线的条件，从而提高铜互连线的可靠性，从而提高成品率。本文较详细地描述了高压退火工艺对双大马士革铜互连线的影响。
We have carried out a detailed study of the relevant process techniques by using high-pressure annealing in order to embed Cu interconnections flawlessly into via holes or trenches, and have thereby identified a process technique increase the reliability of electrical circuits. In th e present study, Cu interconnections were subjected to heat treatment in a high-pressure argon gas atmosphere (150 MPa) with the prospect that such a process might lead to optimized conditions for creating the embedded Cu interconnection by preventing the occurrence of minute voids, improving the distribution of poly-crystalline orientation and improving the adhesive strength between Cu and TaN (barrier layers), thereby increasing the reliability of Cu interconnections and consequently improve the yield. This paper describes the effects of the high-pressure annealing process for dual damascene Cu interconnections in some detail.