Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements
Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements
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DOI：
10.1143/apex.2.105501
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发表时间：
2009-10
影响因子：
2.3
通讯作者：
B. Swain;H. Takato;I. Sakata
中科院分区：
文献类型：
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作者：
B. Swain;H. Takato;I. Sakata
我们将醌/甲醇（Q/M）处理应用于锗（Ge）表面，并表明该处理对锗表面的钝化也有效，用于少数载流子寿命测量。得到了小于20 cm/ S的表面复合速度(S)，这使我们能够准确地评估锗晶圆中少数载流子的体寿命τb。据我们所知，这是第一个成功应用于锗表面获得低s值的湿化学处理的报告。描述和讨论了醌浓度和钝化时间对寿命测量结果的影响。
We have applied quinhydrone/methanol (Q/M) treatment to germanium (Ge) surfaces and shown that this treatment is also effective for passivating Ge surfaces for minority carrier lifetime measurements. Surface recombination velocity (S) of less than 20 cm/s has been obtained, which enables us to accurately evaluate the bulk lifetime of minority carriers, τb, in Ge wafers. To the best of our knowledge, this is the first report on wet chemical treatment successfully applied to Ge surfaces achieving low values of S. The effects of quinhydrone concentration and passivation time on the results of lifetime measurements are described and discussed.