Development of the Pixel OR SOI detector for high energy physics experiments
Development of the Pixel OR SOI detector for high energy physics experiments
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DOI：
10.1016/j.nima.2013.06.044
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发表时间：
2013-12
影响因子：
1.4
通讯作者：
Y. Ono;A. Ishikawa;H. Yamamoto;Y. Arai;T. Tsuboyama;Y. Onuki;A. Iwata;T. Imamura;T. Ohmoto
中科院分区：
文献类型：
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作者：
Y. Ono;A. Ishikawa;H. Yamamoto;Y. Arai;T. Tsuboyama;Y. Onuki;A. Iwata;T. Imamura;T. Ohmoto
摘要绝缘体上硅（SOI）技术是一种适合于高能物理实验的顶点探测器，因为由于其单片结构，可以用少量的材料在SOI晶片上制造复杂的功能。提出了一种基于LAPIS0.20 μ mSOI工艺的像素探测器处理方案“PIXOR（PIXelOR）”。来自每个像素化传感器的模拟信号被分成二维方向，并且来自小的n × n像素矩阵的2n个信号通道被OR运算为n列和n行通道，然后信号由每个小矩阵中的读出电路处理。这种PIXOR方案减少了读出通道的数量，并避免了由于大电路面积而导致的固有位置分辨率的恶化，这是单片探测器的常见问题。该功能允许同时进行高分辨率、低占用率和传感器信号处理。我们提出了成功的结果PIXOR读出计划使用的第一个原型。
Abstract A Silicon-On-Insulator (SOI) Technology is suitable for vertex detectors for high energy physics experiments since complex functions can be fabricated on the SOI wafer with a small amount of material thanks to the monolithic structure. We developed a new sensor processing scheme “PIXOR (PIXel OR)” for pixel detectors using a LAPIS 0.20 μ m SOI process. An analog signal from each pixelated sensor is divided into two dimensional directions, and 2 n signal channels from a small n by n pixel matrix are ORed as n column and n row channels, then the signals are processed by a readout circuit in each small matrix. This PIXOR scheme reduces the number of readout channels and avoids a deterioration of intrinsic position resolution due to large circuit area, that was a common issue for monolithic detectors. This feature allows high resolution, low occupancy and on-sensor signal processing at the same time. We present the successful results of the PIXOR readout scheme using a first prototype.